Novel plasma developable resist compositions and performance of total dry microfabrications in submicron lithography

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Abstract
A principle for the formulation of plasma developable resists and an example of new resist compositions are described. Resist patterns with submicron resolution and excellent profile have been produced readily using new resist compositions and the dry development process which is inherently free from swelling, from which the low resolution of resist images arises. The importance of the dry developable resist in submicron fabrication technology, the characteristics of the new resist compositions in the dry development process, and the dry development mechanism are discussed. The total dry microfabrication including the development of resist, the etching of Si and SiO2 and the removal of resist, was performed in the process using the new resist compositions.

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