A Miniature 2-18 GHz Monolithic GaAs Distributed Amplifier
- 1 January 1984
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 84, 41-44
- https://doi.org/10.1109/mcs.1984.1113599
Abstract
A 2-18 GHz monolithic GaAs distributed amplifier has been developed with over 6dB gain +- 0.5 dB gain ripple, less ttlan 2.0 input and output VSWR less than 7.5 dB noise figure, and greater than 17 dBm power output capability. The amplifier is designed with dual-gate GaAs FET's and measures .75 mm by .85 mm (.64 mm/sup 2/). The small size insures high circuit yield and makes the part cost effective for general applications.Keywords
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