Fabrication of metal-epitaxial insulator-semiconductor field-effect transistors using molecular beam epitaxy of CaF2 on Si
- 15 October 1984
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (8) , 907-909
- https://doi.org/10.1063/1.95410
Abstract
Fabrication of metal‐epitaxial insulator‐semiconductor field‐effect transistors by molecular beam epitaxial growth of CaF2 on Si is reported for the first time. These devices have a room‐temperature electron mobility of 300 cm2/Vs and a threshold voltage of 0.5 V. The breakdown voltage of the films ranges from ≳105 to ≳106 V/cm in different regions of the film. These devices will be important for the characterization and improvement of the interface transport properties of the CaF2/Si system.Keywords
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