Heteroepitaxial growth of β-SiC thin films on Si(100) substrate using bis-trimethylsilylmethane
- 23 December 1996
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 69 (26) , 4053-4055
- https://doi.org/10.1063/1.117868
Abstract
A non‐toxic and non‐flammable organosilicon source having alternate Si–C bonding structure, bis‐trimethylsilylmethane [C7H20Si2], was first used to deposit epitaxial β‐SiC films at low growth temperature by chemical vapor deposition. Epitaxial β‐SiC films were successfully grown on carburized Si(100) substrates at temperatures as low as 1100 °C, although the carburized buffer layer was a well‐oriented, (100) polycrystalline film. Transmission electron microscopy analysis revealed that the films contain twins, stacking faults, and antiphase boundaries. Without the carburized buffer layer, highly (111) preferred oriented β‐SiC films were grown by increasing the growth temperature.Keywords
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