High-field electron distribution in GaAs
- 1 July 1966
- journal article
- Published by Elsevier in Physics Letters
- Vol. 21 (6) , 612-614
- https://doi.org/10.1016/0031-9163(66)90090-4
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Field dependence of mobility in the (100) conduction band minima of GaAsPhysics Letters, 1966
- High-field distribution function in GaAsIEEE Transactions on Electron Devices, 1966
- Intervalley transfer of hot electrons in gallium arsenidePhysics Letters, 1965
- Mechanism of the Gunn Effect from a Pressure ExperimentPhysical Review Letters, 1965
- Instabilities of Current in III–V SemiconductorsIBM Journal of Research and Development, 1964
- Band Structure and Electron Transport of GaAsPhysical Review B, 1960