Microwave operation of high power InGaP/GaAs heterojunction bipolar transistors

10 June 1993

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 29 (12) , 1068-1069
https://doi.org/10.1049/el:19930713

Abstract

The first high power demonstration of an InGaP/GaAs heterojunction bipolar transistor is presented. Multifinger selfaligned HBTs were tested at 3 GHz. A maximum output power of 2.82 W CW was obtained for a 600 μm² emitter area device (4.7 mW/μm² power density) with an attendant gain of 6.92 dB; simultaneously, the device exhibited 55.2% power added efficiency, 69.1% collector efficiency and 8.0 × 10⁴ A/cm² emitter current density.

Keywords

HIGH POWER
COLLECTOR EFFICIENCY
HETEROJUNCTION BIPOLAR TRANSISTORS
69.1 PERCENT
MULTIFINGER SELFALIGNED HBT
CW OUTPUT
POWER ADDED EFFICIENCY
INGAP-GAAS
3 GHZ
2.82 W
55.2 PERCENT

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