Time-Decay Characteristics for the Red Emission from GaP

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Abstract
The decay of the red emission from a Zn–O- and Te-doped GaP p-n junction was measured. The measurements were made for temperatures between 77°K and 298°K by using current pulses (0.5–2.0) μsec in duration and (10–200) A/cm2 in amplitude. At low temperatures (T≤113°K for the GaP studied here), the emission decayed like t−1 at long times, indicating that the emission was due to pair recombination (recombination of an electron and a hole bound to distant impurity levels). At high temperatures (T>139°K), the emission decayed exponentially with a single time constant which was independent of the current amplitude and which decreased with increasing temperature. This result is consistent with the exciton decay mechanism recently found at low temperature by Morgan et al. and Henry et al. to account for a part of the red emission from GaP.