Transient-mode liquid phase epitaxial growth of GaAs on GaAs-coated Si substrates prepared by migration-enhanced molecular beam epitaxy
- 1 September 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 97 (2) , 303-309
- https://doi.org/10.1016/0022-0248(89)90210-8
Abstract
No abstract availableKeywords
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