Electronic Contribution to the Dynamical Screening in the Theory of Excitons in III–V and II–VI Semiconductors with Zincblende Structure

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Abstract
Starting from the Bethe‐Salpeter equation formulation of Sham and Rice the influence of the dynamical screening in the theory of direct excitons in III–V and II–VI zincblende structure semiconductors is computed taking into account the wave vector dependence of the dielectric constant and higher reciprocal lattice vectors. With the aid of published results of the dielectric constant calculations in the R.P.A. for zincblende semiconductors the influence of the dynamical screening is calculated exactly within the ladder approximation up to the order of magnitude EB/Egap. The results agree with the general statement by Zimmermann that the binding energy should increase due to dynamical screening. Comparison with experiments becomes possible only through the inclusion of some further corrections.

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