The silicon-silicon dioxide system
- 1 January 1969
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE
- Vol. 57 (9) , 1543-1551
- https://doi.org/10.1109/proc.1969.7334
Abstract
Study of the silicon-silicon dioxide system as a junction between a nearly ideal semiconductor and insulator has aroused both scientific and technological interest. Surface phenomena associated with this system are influenced by contamination and imperfections in the oxide, impurity redistribution in the silicon near the oxide, and finally by additional electronic energy states at the oxide-silicon interface. Over the past few years, the MOS (metal-oxide-semiconductor) approach has been highly developed and is the principal tool for the investigation of silicon surface phenomena. The theory of the ideal MOS capacitor is reviewed followed by a study of its use in the analysis of surface effects. Finally, the three-way relationship of the effect of oxide formation conditions and heat treatment on the properties of the oxidized silicon surface, and the subsequent influence of the properties of this surface on semiconductor device parameters is reviewed.Keywords
This publication has 23 references indexed in Scilit:
- FREEZE-OUT CHARACTERISTICS OF THE MOS VARACTORApplied Physics Letters, 1968
- Proton and sodium transport in SiO2filmsIEEE Transactions on Electron Devices, 1967
- The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance TechniqueBell System Technical Journal, 1967
- Surface states at steam-grown silicon-silicon dioxide interfacesIEEE Transactions on Electron Devices, 1966
- DENSITY OF SiO2–Si INTERFACE STATESApplied Physics Letters, 1966
- General Relationship for the Thermal Oxidation of SiliconJournal of Applied Physics, 1965
- Ion Transport Phenomena in Insulating FilmsJournal of Applied Physics, 1965
- Lateral AC current flow model for metal-insulator-semiconductor capacitorsIEEE Transactions on Electron Devices, 1965
- Observation of Impurity Redistribution During Thermal Oxidation of Silicon Using the MOS StructureJournal of the Electrochemical Society, 1965
- Calculation of the Space Charge, Electric Field, and Free Carrier Concentration at the Surface of a SemiconductorJournal of Applied Physics, 1955