Experimental demonstration of high-power fast-rise-time switching in silicon junction semiconductors
- 15 August 1976
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 29 (4) , 261-263
- https://doi.org/10.1063/1.89038
Abstract
Experimental results are presented demonstrating fast turn-on and high power-handling capability in light-activated silicon junction (PNPN) devices. Rise time to 2 ns, rate of current rise to 760 kA/μs, and switched power level of 10 MW were demonstrated.Keywords
This publication has 1 reference indexed in Scilit:
- A kilovolt picosecond optoelectronic switch and Pockel’s cellApplied Physics Letters, 1976