An efficient multiresonant avalanche diode oscillator in the 1.5 to 11 GHz range
- 1 January 1968
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE
- Vol. 56 (11) , 2054-2055
- https://doi.org/10.1109/proc.1968.6786
Abstract
The extremely broad-band negative resistance properties of a punch-through silicon avalanche diode enables efficient operation to be extended to small transit angles. Operation over approximately three octaves is effected by the transit-time mode and a low-frequency mode characterized by the presence of higher frequency idler components.Keywords
This publication has 0 references indexed in Scilit: