Enhancement of Faraday Effect in Highly Ce-Substituted YIG Epitaxial Films by RF Sputtering
- 1 January 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (1A) , L99
- https://doi.org/10.1143/jjap.29.l99
Abstract
Faraday rotation and ellipticity spectra were measured at photon energy h v=0.9–4.0 eV for films of Y2Ce1Fe5O12 and Y3Fe5O12 epitaxially grown by rf sputtering. The Ce substitution prominently enhances Faraday effect with paramagnetic dispersion relation not only in the IR region (centered at h v≃1.4 eV) but also in the UV region (centered at h v≃3.1 eV). The enhancements in the IR and UV regions are nearly equal in magnitude but opposite in sign. Thus the magneto-optical enhancement by Ce in garnet can be ascribed to two electronic transitions centered around 1.4 and 3.1 eV.Keywords
This publication has 3 references indexed in Scilit:
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