Cr-Related Intracenter Luminescence in GaAs: Cr
- 1 November 1982
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 21 (11A) , L727
- https://doi.org/10.1143/jjap.21.l727
Abstract
The 0.839eV C-related intracenter luminescence has been investigated using various kinds of Cr-doped and Cr-diffused GaAs. It has been found that the luminescence intensity increases monotonously with the Cr content involved in GaAs but is not linear to the Cr content. This result suggests that the luminescence arises from a complex involving Cr and another defect or impurity. The spectral shape of luminescence is independent of the majority donor impurities contained in GaAs, but the intensity decreases with increase of arsenic pressure during the Cr diffusion. These results indicated that the Cr-related luminescence line at 0.839eV in GaAs: Cr is associated with a complex of Cr and As-vacancy.Keywords
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