Experimental study of the response time of GaAs as a photoemitter

Abstract
An experimental investigation was carried out to measure the response time of GaAs in negative electron affinity conditions as a photoemitter. During the experiment, the photocathode was excited by a short-pulse (38 ps rms) frequency-doubled Nd:YLF laser. Results show that the rms response time of GaAs is shorter than 40 ps.

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