Influence of injection rate on carrier lifetime degradation in p-type silicon irradiated by 4.5 MeV electrons
- 1 June 1971
- journal article
- Published by Elsevier in Nuclear Instruments and Methods
- Vol. 93 (3) , 413-415
- https://doi.org/10.1016/0029-554x(71)90065-6
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Transient Recombination of Excess Carriers in SemiconductorsPhysical Review B, 1958
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952