Transition from radiative to nonradiative recombination in 1.3-/spl mu/m and 1.5-/spl mu/m InGaAs(P) multiple quantum well semiconductor diode lasers
- 1 January 1998
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
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This publication has 1 reference indexed in Scilit:
- Temperature sensitivity and high temperature operation of long wavelength semiconductor lasersApplied Physics Letters, 1993