Continuous room-temperature operation of a 759-nm GaAlAs distributed feedback laser
- 16 November 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (20) , 1580-1581
- https://doi.org/10.1063/1.98560
Abstract
The first continuous wave (cw) operation at room temperature of a GaAlAs short-wavelength distributed feedback (DFB) laser is reported. The cw operation at a wavelength of 759 nm was realized by use of the buried twin-ridge substrate (BTRS) structure which has an excellent current confinement efficiency in the active region. The hybrid liquid phase epitaxy and the metalorganic chemical vapor deposition growth technology were used for the fabrication of short-wavelength GaAlAs DFB BTRS lasers.Keywords
This publication has 4 references indexed in Scilit:
- AlGaAs/GaAs distributed feedback laser diodes grown by MOCVDJournal of Crystal Growth, 1986
- A 0.2 W CW laser with buried twin-ridge substrate structureIEEE Journal of Quantum Electronics, 1985
- GaAs/AlGaAs distributed feedback-transverse junction stripe laser using a hybrid liquid phase epitaxy/metal-organic chemical vapor deposition growth techniqueJournal of Applied Physics, 1981
- Lasing characteristics of distributed-feedback GaAs-GaAlAs diode lasers with separate optical and carrier confinementIEEE Journal of Quantum Electronics, 1976