In situ ellipsometry studies of the growth of Pb on Si(111) surfaces
- 31 January 1988
- journal article
- Published by Elsevier in Surface Science
- Vol. 193 (1-2) , 212-220
- https://doi.org/10.1016/0039-6028(88)90332-9
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Electronic structure of Sb overlayers on GaAs(110)Physical Review B, 1986
- Low energy ion scattering study of adsorption and desorption processes of Pb on Si(111) surfacesSurface Science, 1985
- Complementary data obtained on the metal-semiconductor interface by LEED, AES and SEM: Pb/Ge(111)Surface Science, 1983
- The structure and properties of metal-semiconductor interfacesSurface Science Reports, 1982
- Ellipsometry study of (0001) cadmium crystal faces during vapour growthSurface Science, 1981
- Ellipsometry of clean surfaces, submonolayer and monolayer filmsSurface Science, 1980
- Étude de l'adsorption par ellipsométrie: adsorption du Xe/(0001) graphiteSurface Science, 1975
- Surface-state densities on clean semiconductor surfaces measured by ellipsometryPhysical Review B, 1974
- Absolute Values of the Optical Constants of Some Pure MetalsPhysica Scripta, 1971
- Studies of monolayers of lead and tin on Si(111) surfacesSurface Science, 1964