Microstructure of CuInS2films prepared by sulfuration of Cu–In–O films
- 1 March 1993
- journal article
- Published by Springer Nature in Journal of Materials Research
- Vol. 8 (3) , 545-550
- https://doi.org/10.1557/jmr.1993.0545
Abstract
Polycrystalline CuInS2thin films are prepared by sulfuration of Cu–In–O films. The Cu–In–O films are deposited from a sintered Cu2In2O5target by using a pulsed laser deposition (PLD) method. Then, the Cu–In–O films are converted into CuInS2films by means of a subsequent annealing in an H2S gas atmosphere. The characteristics of the films are determined by using an x-ray diffractometer (XRD), an energy dispersive x-ray spectrometer (EDX), and a scanning electron microscope (SEM). The effects of the deposition and sulfuration temperatures of the Cu–In–O films on the structural and microstructural properties of CuInS2films are examined experimentally. Single-phase CuInS2films with a chalcopyrite structure are obtained when Cu–In–O films are sulfurated at a temperature higher than 400 °C. Grain size of CuInS2is larger when a lower deposition temperature and a higher sulfuration temperature of Cu–In–O films are employed.Keywords
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