Temperature-dependent dry etching characteristics of III?V semiconductors in HBr- and HI-based discharges
- 1 June 1994
- journal article
- research article
- Published by Springer Nature in Plasma Chemistry and Plasma Processing
- Vol. 14 (2) , 131-150
- https://doi.org/10.1007/bf01465743
Abstract
No abstract availableThis publication has 25 references indexed in Scilit:
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