Recombination lifetime using the pulsed MOS capacitor
- 1 April 1984
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 31 (4) , 462-467
- https://doi.org/10.1109/t-ed.1984.21551
Abstract
The pulsed MOS capacitor is routinely used to measure the generation lifetime. A new technique is described here in which the same device is used to obtain the recombination lifetime. The measurement technique is identical to the commonly used pulsed C-t method except that the device is operated at an elevated temperature of 70- 100°C, where quasi-neutral current originating below the space-charge region dominates over space-charge region currents. The new technique, coupled with established techniques, makes possible the simultaneous determination of τgand τr.Keywords
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