Effects of barrier thicknesses on the electron concentration in not-intentionally doped InAs–AlSb quantum wells
- 1 March 1992
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 10 (2) , 898-900
- https://doi.org/10.1116/1.586147