Indium Phosphide
- 1 January 1973
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 120 (12) , 1757-1760
- https://doi.org/10.1149/1.2403358
Abstract
Indium phosphide double epitaxy light emitting diodes with a 1.5% quantum efficiency and 1.3% power efficiency at 300°K are reported. The emission spectrum half width is 50% of the amphoterically doped diode spectrum and this makes the diodes four times more efficient as infrared pumps for the two‐photon phosphor green emitting diodes. The peak of the diode emission varies from 1.29 to 1.30 eV at 300°K.Keywords
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