Influence of the erbium and oxygen content on the electroluminescence of epitaxially grown erbium-doped silicon diodes
- 5 May 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (18) , 2431-2433
- https://doi.org/10.1063/1.118893
Abstract
The electroluminescence behavior of erbium-oxygen-doped silicon light emitting diodes grown by molecular beam epitaxy was studied for a fixed oxygen to erbium concentration ratio of about six. The diodes were operated in reverse bias. An increase of the erbium and oxygen content leads to a stronger erbium intensity at 5 K up to an erbium concentration of 1.5×1020 cm−3, an enhanced decrease of the erbium intensity with higher temperatures, and a shift of the temperature quenching onset to lower temperatures. The strongest erbium electroluminescence emission in reverse bias in this set of samples was obtained from annealed Si:Er-diodes doped with concentrations of 5×1019, or 1.5×1020 cm−3 erbium and 3×1020 or 3×1021 cm−3 oxygen, respectively. Electroluminescence emission due to erbium was detected up to 440 K.Keywords
This publication has 13 references indexed in Scilit:
- Room temperature electroluminescence of Er-implanted silicon diodes grown by MBEApplied Surface Science, 1996
- Materials issues and device performances for light emitting Er-implanted SiNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1995
- Temperature dependence and quenching processes of the intra-4fluminescence of Er in crystalline SiPhysical Review B, 1994
- Room-temperature sharp line electroluminescence at λ=1.54 μm from an erbium-doped, silicon light-emitting diodeApplied Physics Letters, 1994
- Room-temperature electroluminescence from Er-doped crystalline SiApplied Physics Letters, 1994
- Observation of velocity-tuned resonances in the reflection of atoms from an evanescent light gratingPhysical Review A, 1994
- Optical activation and excitation mechanisms of Er implanted in SiPhysical Review B, 1993
- Local structure of 1.54-μm-luminescence Er3+ implanted in SiApplied Physics Letters, 1992
- Evaluation of erbium-doped silicon for optoelectronic applicationsJournal of Applied Physics, 1991
- Impurity enhancement of the 1.54-μm Er3+ luminescence in siliconJournal of Applied Physics, 1991