Theory of the quantum efficiency in silicon and germanium

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Abstract
The spectrum dependence of the quantum efficiency of the internal photoelectric effect in silicon and germanium as recently measured by Christensen (see J. Appl. Phys., vol.47, p.689 (1976)) is interpreted in terms of the primary absorption process and the secondary relaxation processes. In particular, the interband Auger effect and emission of phonons directly connected with the generation of additional electron-hole pairs are discussed in detail.