Negative differential conductance at room temperature in three-terminal silicon surface junction tunneling device
- 21 April 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (16) , 2138-2140
- https://doi.org/10.1063/1.118970
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- A CV technique for measuring thin SOI film thicknessIEEE Electron Device Letters, 1991
- Subband spectroscopy by surface channel tunnelingSurface Science, 1978
- New Phenomenon in Narrow GermaniumJunctionsPhysical Review B, 1958