Aging test of MOCVD shallow proton stripe GaInAsP/InP, DH laser diode emitting at 1.5 μm

23 June 1983

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 19 (13) , 481-483
https://doi.org/10.1049/el:19830327

Abstract

We report on the aging of a continuous-wave (CW) GaInAsP/InP double-heterostructure laser emitting at 1.5 μm, grown for the first time by MOCVD. This device has been operated at room temperature for more than 10⁴ h without significant degradation.

Keywords

GAINASP/INP
SHALLOW PROTON STRIPE
DOUBLE-HETEROSTRUCTURE LASER
SEMICONDUCTOR LASERS
AGEING TESTS
DH LASER DIODE
1.5 MICRON
MOCVD
III-V SEMICONDUCTOR

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