Electrical and Optical Properties of Intermetallic Compounds. III. Aluminum Antimonide
- 1 November 1954
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 96 (3) , 578-580
- https://doi.org/10.1103/physrev.96.578
Abstract
Measurements of resistivity, Hall coefficient, and optical absorption of AlSb are reported. The width of the forbidden energy band, derived from electrical and optical data, is 1.6 ev at absolute zero. Absorption bands are observed at 0.75 ev in -type samples and at 0.31 ev in tellurium-doped -type specimens. An energy level diagram with several acceptor and donor levels in the forbidden energy band is suggested to explain these observations.
Keywords
This publication has 7 references indexed in Scilit:
- Electrical and Optical Properties of Intermetallic Compounds. I. Indium AntimonidePhysical Review B, 1954
- Electrical Properties of Titanium Dioxide SemiconductorsPhysical Review B, 1953
- Electronic Conduction in Silicon CarbideThe Journal of Chemical Physics, 1953
- Über neue halbleitende Verbindungen IIZeitschrift für Naturforschung A, 1953
- Über neue halbleitende VerbindungenZeitschrift für Naturforschung A, 1952
- Localized Electronic States in Bombarded SemiconductorsZeitschrift für Physikalische Chemie, 1951
- Introduction to the Luminescence of SolidsPhysics Today, 1950