Incorporation Process of the As Atom on the InP(001) Surface Studied by Extended X-Ray Absorption Fine Structure

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Abstract
The incorporation process of As atoms during metalorganic vapor phase epitaxy (MOVPE) has been studied by extended X-ray absorption fine structure (EXAFS). The growth of InP(001) was interrupted and the surface was exposed to arsine ( AsH3) for the investigation of the incorporation of As atoms during the AsH3 gas flow interval. It was found that the As atoms replace the P atoms, from the analysis of the As K-edge EXAFS. The amount of the incorporated As atoms as a function of the AsH3 exposure time shows that the substitution consists of two processes with different time scales. In the fast process, which saturates in a few seconds, the incorporated As atoms substitute the P atoms on the surface with an anomalous bond length relaxation, while the slow process continues in the subsurface over a wide rage of the exposure time.