A comparison of laser and electron beam pulsed annealing of deposited layers
- 1 January 1979
- proceedings article
- Published by AIP Publishing in AIP Conference Proceedings
- Vol. 50 (1) , 503-508
- https://doi.org/10.1063/1.31707
Abstract
We summarize here a comparison of laser and pulsed electron‐beam annealing (PEBA) of amorphous Ge and si layers evaporated on single‐crystal substrates. The annealing characteristics were analyzed by MeV 4He+ backscattering spectrometry and TEM. It was found that both techniques are capable of inducing epitaxy, but at present pulsed electron beam annealing seems to offer better annealing beam uniformity over a relatively large area.Keywords
This publication has 0 references indexed in Scilit: