Strain and strain relief in highly doped silicon
- 2 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
A structure is devised to measure tensile strains in etch-released films. Tensile strain values found for a family of boron-doped, etch-released films are presented. A means is described for reducing the force resulting from the strain in a fiber.Keywords
This publication has 1 reference indexed in Scilit:
- Stress and thermal expansion of boron-doped silicon membranes on silicon substratesJournal of Vacuum Science & Technology A, 1991