Interpretation of capacitance-voltage characteristics of polycrystalline silicon thin-film transistors
- 1 February 1987
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 61 (3) , 1176-1180
- https://doi.org/10.1063/1.338164
Abstract
Measurements of the gate-to-channel capacitance in thin-film transistors are potentially useful for rapid evaluation of insulator and interface quality. In this paper, we develop a transmission line model of the gate-to-channel capacitance. We then compare the model with measurements made on unpassivated polycrystalline silicon thin-film transistors. An excellent fit to the measurements is obtained. Finally, we discuss the influence of semiconductor traps and insulator charge on the measured capacitance.This publication has 10 references indexed in Scilit:
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