KINETIC PATHWAY IN STRANSKI-KRASTANOV GROWTH OF Ge ON Si(001)

1 December 1990

journal article
Published by World Scientific Pub Co Pte Ltd in Modern Physics Letters B

Vol. 4 (22) , 1379-1384
https://doi.org/10.1142/s0217984990001732

Abstract

Scanning tunneling microscopy studies of the kinetic processes involved in the two-dimensional (2D) to three-dimensional (3D) transition in Stranski-Krastanov growth of Ge on Si(001) reveal a novel type of 3D cluster that serves as the kinetic pathway for this transition.

Keywords

KINETIC PATHWAY
STRANSKI KRASTANOV GROWTH
GROWTH OF GE
TUNNELING

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