High efficiency GaAs solar cells using GaInP/sub 2/ window layers
- 4 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 138-140
- https://doi.org/10.1109/pvsc.1990.111605
Abstract
GaAs single-junction solar cells using Ga/sub 0.5/In/sub 0.5/P and having 1 sun, an air mass (AM) of 1.5, and global efficiencies of 25.0-25.7% are reported. The open-circuit voltage (V/sub oc/), short-circuit current (J/sub sc/), and fill factor (ff) for the 25.7% efficient cell were 1.039 V, 28.5 mA/cm/sup 2/, and 86.8%, respectively. The devices were grown at 700 degrees C using conventional atmospheric pressure metalorganic chemical vapor deposition (MOCVD). The antireflection coating is a double layer of MgF/sub 2/ and ZnS. V/sub oc/'s as high as 1.055 V were obtained for some of the devices. This high V/sub oc/ is attributed to the low interface recombination velocity of the Ga/sub 0.5/In/sub 0.5/P-GaAs heterointerface. Factors that affect the efficiency of this device, including the thickness and composition of the Ga/sub 0.5/In/sub 0.5/P window layer, are presented and discussed.<>Keywords
This publication has 1 reference indexed in Scilit:
- Ultralow recombination velocity at Ga0.5In0.5P/GaAs heterointerfacesApplied Physics Letters, 1989