The excitonic structure of absorption and magnetoabsorption spectra near the type I-II transition in strained (In, Ga)As/GaAs heterostructures
- 1 May 1995
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 10 (5) , 611-615
- https://doi.org/10.1088/0268-1242/10/5/007
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Strain effects and band offsets in GaAs/InGaAs strained layered quantum structuresJournal of Applied Physics, 1989