Photoelectrochemically synthesised interfacial oxides on silicon: composition and electronic properties
- 1 December 1989
- journal article
- Published by Elsevier in Electrochimica Acta
- Vol. 34 (12) , 1729-1732
- https://doi.org/10.1016/0013-4686(89)85056-x
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- In‐Situ Interface Conditioning at Amorphous Silicon/Aqueous Electrolyte JunctionsJournal of the Electrochemical Society, 1987
- The electrochemical behaviour of n‐type silicon (111)‐surfaces in fluoride containing aqueous electrolytesBerichte der Bunsengesellschaft für physikalische Chemie, 1987
- Photoanodic properties of an n-type silicon electrode in aqueous solutions containing fluoridesJournal of Electroanalytical Chemistry and Interfacial Electrochemistry, 1983
- Hydrogenated amorphous silicon/electrolyte contacts: Band bending and photoresponse dependence on surface reactionsJournal of Applied Physics, 1982
- Improvement of photoelectrochemical hydrogen generation by surface modification of p-type silicon semiconductor photocathodesJournal of the American Chemical Society, 1982
- Silicon photocathode behavior in acidic vanadium(II)-vanadium(III) solutionsJournal of the American Chemical Society, 1981
- Use of chemically derivatized n-type silicon photoelectrodes in aqueous media. Photooxidation of iodide, hexacyanoiron(II), and hexaammineruthenium(II) at ferrocene-derivatized photoanodesJournal of the American Chemical Society, 1980
- Practical limitations to accuracy in a nulling automatic wavelength-scanning ellipsometerSurface Science, 1976
- Potential distribution and formation of surface states at the silicon-electrolyte interfaceSurface Science, 1966
- Passivity phenomena at the silicon/electrolyte interfaceElectrochimica Acta, 1964