Transient Response of the Grounded Base Transistor Amplifier with Small Load Impedance
- 1 November 1953
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 24 (11) , 1355-1357
- https://doi.org/10.1063/1.1721177
Abstract
An analysis of the transient response of transistor amplifiers necessitates the consideration of transit time effects. Transit time behavior of minority carriers is described by the diffusion equation. Since the diffusion equation applies to minority carriers in the base region of a transistor, a current transfer function may be derived from the diffusion equation relating the collector current to the emitter current. This transfer function is valid only when the transistor is operated as a linear amplifier with small load impedance. For these conditions, the transfer function is solved for the collector current response to a step in emitter current by use of Laplace transform techniques. The collector current rise time, as a function of the α cut-off frequency, is derived from the theoretical equations and compared to measured values.This publication has 3 references indexed in Scilit:
- Effects of Space-Charge Layer Widening in Junction TransistorsProceedings of the IRE, 1952
- Junction TransistorsPhysical Review B, 1951
- Some Circuit Properties and Applications of n-p-n TransistorsProceedings of the IRE, 1951