Collector/emitter offset voltage in double-heterojunction bipolar transistors

13 September 1984

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 20 (19) , 766-767
https://doi.org/10.1049/el:19840521

Abstract

Double-heterojunction bipolar transistors (DHBT) can exhibit a large collector/emitter offset voltage at zero collector current which will adversely affect digital switching circuits. It is shown that this effect results from insufficient grading at the base/collector heterojunction. A GaAlAs/GaAs DHBT grown by MBE having a 130 Å compositional grading at the emitter/base and base/collector junction showed no sign of the collector/emitter offset voltage.

Keywords

COLLECTOR/EMITTER OFFSET VOLTAGE
130 ANGSTROMS COMPOSITIONAL GRADING
MBE
DOUBLE-HETEROJUNCTION BIPOLAR TRANSISTORS
BASE/COLLECTOR JUNCTIONS
INSUFFICIENT GRADING
III-V SEMICONDUCTORS
BASE/COLLECTOR HETEROJUNCTION
DIGITAL SWITCHING CIRCUITS
DHBT
GAALAS/GAAS DHBT
EMITTER BASE JUNCTION