Influence of Sapphire Nitridation on Properties of Indium Nitride Prepared by Metalorganic Vapor Phase Epitaxy
- 1 February 1999
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 38 (2R) , 645-648
- https://doi.org/10.1143/jjap.38.645
Abstract
Indium nitride films have been successfully grown on (0001) sapphire substrates by metalorganic vapor phase epitaxy (MOVPE) using TMIn and NH3 as source precursors. Experimental results indicated that pregrowth treatments, such as buffer layer growth, nitridation temperature and nitridation duration have dramatic effects on the growth of the InN films. For films nitridated at 1,000°C for 40 min without any buffer layer growth, we obtained an InN film quality with Hall mobility, carrier concentration and line width of Raman E2 mode of 270 cm2/V·s, 5 ×1019 cm-3 and 4.5 cm-1, respectively, which is among the best quality ever reported for such type of film grown by MOVPE.Keywords
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