Technological constraints upon the properties of deep levels used for lifetime control in the fabrication of power rectifiers and thyristors
- 31 December 1977
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 20 (12) , 1029-1032
- https://doi.org/10.1016/0038-1101(77)90217-9
Abstract
No abstract availableThis publication has 1 reference indexed in Scilit:
- Optimization of recombination levels and their capture cross section in power rectifiers and thyristorsSolid-State Electronics, 1977