InP Etch Pit Morphologies Revealed by Novel HCl ‐ Based Etchants

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Abstract
A new dislocation etchant for has been developed which consists of in the volume ratio of 20:2:20:20. This etchant reveals distinct etch pits with a threefold symmetry on the (111)P surface. On the (001) wafer surfaces, the etched pits have a pyramidal shape and they are elongated along one of the directions with four {111} sidewall planes. The longer dimension of the rectangular pits on (001) wafers etched by this solution is perpendicular to that etched by solution. The characteristics of this new etchant can be changed from a dislocation etchant to a polishing solution by increasing the volume ratio. This new etchant can have a substantially longer shelf time (∼12h) than the conventional etchant. The use of the conventional etchants imposes a severe limitation on processing the desirable laser structure. By mixing a proper ratio of our new etchant with the conventional etchants, we can have a new degree of freedom in laser fabrication.

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