10 Gbit/s operation of polarisation insensitive, strained InGaAsP/InGaAsP MQW electroabsorption modulator
- 24 June 1993
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 29 (13) , 1201-1203
- https://doi.org/10.1049/el:19930803
Abstract
Polarisation-independent operation of a strained InGaAsP/InGaAsP multiquantum well electroabsorplion modulator is reported for the first time. A clearly open eye diagram is observed at 10 Gbit/s with scrambled polarisation state of input light. The chirp parameter is also reported for both TE and TM.Keywords
This publication has 1 reference indexed in Scilit:
- Chapter 3 Optical Studies of Strained III-V HeterolayersPublished by Elsevier ,1990