Optical and magnetic resonance characterization of undoped and doped wurtzite GaN films deposited on sapphire substrates
- 1 February 1997
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 41 (2) , 185-188
- https://doi.org/10.1016/s0038-1101(96)00163-3
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- GaN FETs for microwave and high-temperature applicationsSolid-State Electronics, 1997
- Optically detected magnetic resonance of GaN films grown by organometallic chemical-vapor depositionPhysical Review B, 1995
- Thermally annealed GaN nucleation layers and the device-quality metal organic chemical vapor deposition growth of Si-doped GaN films on (00.1) sapphireJournal of Applied Physics, 1994
- Electron-spin-resonance studies of donors in wurtzite GaNPhysical Review B, 1993
- Observation of optically detected magnetic resonance in GaN filmsApplied Physics Letters, 1993
- ODMR Studies of MOVPE-Grown GaN Epitaxial LayersMaterials Science Forum, 1993
- Growth of high optical and electrical quality GaN layers using low-pressure metalorganic chemical vapor depositionApplied Physics Letters, 1991
- Mechanism of Yellow Luminescence in GaNJapanese Journal of Applied Physics, 1980
- Luminescence of Be- and Mg-doped GaNJournal of Applied Physics, 1973
- Absorption, Reflectance, and Luminescence of GaN Epitaxial LayersPhysical Review B, 1971