Reactive Ion Etching of Copper Films in SiCl4 and N2 Mixture
- 1 June 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (6A) , L1070-1072
- https://doi.org/10.1143/jjap.28.l1070
Abstract
Reactive ion etching of Cu films in SiCl4 and N2 is proposed for the fabrication of copper interconnection lines in LSIs. Cu films can be etched using a wafer heated to at least 250°C. Adding N2 to SiCl4 has two advantages. One is that it prevents the etching rate of Cu between narrow pattern spaces from decreasing because it removes organic material on Cu films near resist patterns. The other is that it forms protective films such as SiN on the side walls of Cu patterns and prevents side etching. The side wall taper is controlled by changing the N2 flow percentage.Keywords
This publication has 3 references indexed in Scilit:
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- The Effects of Mixing N 2 in CCl4 on Aluminum Reactive Ion EtchingJournal of the Electrochemical Society, 1982
- Vapour pressures of the solid copper (I) halidesTransactions of the Faraday Society, 1961