A high-efficiency HBT MMIC power amplifier
- 4 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 357-360
- https://doi.org/10.1109/gaas.1990.175528
Abstract
An AlGaAs/GaAs heterojunction bipolar transistor monolithic microwave IC (HBT MMIC) power amplifier is developed that demonstrates very high power-added efficiency, high gain, and broad bandwidth. It uses a cascode structure with four 200- mu m common-emitter HBT cells driving four common-base cells of the same size. This amplifier achieves over 14-dB gain from 6 to 10 GHz, with a peak power-added efficiency (PAE) of 47% at 7.5 GHz at an output power level of 31 dBm. This corresponds to a power density of over 3 W per millimeter of emitter length. Input and output matching networks, as well as biasing networks, are all contained within the chip, which measures 80*80 mils (2*2 mm).<>Keywords
This publication has 3 references indexed in Scilit:
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- 5 W monolithic HBT amplifier for broadband X-band applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- AlGaAs/GaAs heterojunction bipolar transistors fabricated using a self-aligned dual-lift-off processIEEE Electron Device Letters, 1987