Local electron concentration-dependent electronic stopping power model for Monte Carlo simulation of low-energy ion implantation in silicon

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Abstract
We have developed a new electronic (inelastic) stopping model for low-energy implanted ions which explicitly accounts for the effect of the local variation of the electron density between the lattice atoms in the silicon crystal target material on the amount and rate of energy loss due to electronic processes. Designed for incorporation into Monte Carlo simulation codes, this model more accurately predicts the energy loss of ions due to electronic processes, and it provides significantly better agreement with experimental profiles of boron implanted into single-crystal silicon over a wide range of energies and incident angles compared with the agreement obtained with other electronic stopping models.