Readout sensitivity of an amorphous semiconductor electron beam memory
- 1 April 1973
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 44 (4) , 1936-1937
- https://doi.org/10.1063/1.1662492
Abstract
The theory of readout modulation efficiency of recording by surface deformation of amorphous semiconductor targets in an electron beam memory has been derived. The theory is based on the enhancement of the secondary yield due to oblique incident electrons. This angular dependence of the yield of amorphous and crystalline forms of Ge37Te60As3 and Mo has been measured. Based on these measurements, the possible modulation efficiencies are described.This publication has 3 references indexed in Scilit:
- An amorphous semiconductor electron beam memoryIEEE Transactions on Magnetics, 1972
- SECONDARY ELECTRON EMISSION OF AMORPHOUS SEMICONDUCTOR THIN FILMSApplied Physics Letters, 1971
- The depth at which secondary electrons are liberatedPhysica, 1936