The low-temperature velocity-field characteristic of n-type gallium arsenide
- 11 August 1969
- journal article
- Published by Elsevier in Physics Letters A
- Vol. 29 (10) , 596-597
- https://doi.org/10.1016/0375-9601(69)91114-1
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Influence of ionized impurity scattering on the Gunn-effect characteristic in GaAs in the displaced Maxwellian approximationPhysics Letters A, 1969
- Hot electron effects at microwave frequencies in GaAsSolid State Communications, 1969
- Displaced Maxwellian Calculation of Transport in-Type GaAsPhysical Review B, 1969
- Transport Properties of GaAsPhysical Review B, 1968
- Influence of nonparabolicity on the Gunn-effect characteristic in GaAs in the displaced Maxwellian approximationPhysics Letters A, 1968