PbS MIS devices for charge-coupled infrared imaging applications

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Abstract
Results of an experimental investigation of PbS MIS devices suggest the feasibility of developing a monolithic two‐dimensional infrared charge‐coupled imaging device (CCID). This CCID would be operable at 77 K and have moderate imaging sensitivity out to about 3.5 μm. Measurements on MIS capacitors fabricated with a pyrolytic SiO2 insulator have shown that the PbS surface potential is variable with bias from accumulation through inversion, the interface state density is ∼1×1012 cm−2 eV−1, and the storage time at 77 K is about 2 sec. Calculations indicate that efficient charge transfer should be achievable with fat‐zero operation, and that imaging sensitivity will probably be controlled by the degree of uniformity that can be attained.